Trace Elemental Analysis of Trichlorosilane by Agilent ICP-MS
Aplikace | 2021 | Agilent Technologies Instrumentace
ICP/MS
ZaměřeníPolovodiče
VýrobceAgilent Technologies
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WCPS: Ultratrace Analysis of Phosphorus, Boron and Other Impurities in Photovoltaic Silicon and Trichlorosilane by ICP-MS with High Energy Collision Cell
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Ultratrace Analysis of Phosphorus, Boron and Other Impurities in PhotovoltaicSilicon and Trichlorosilane by ICP-MS with High Energy Collision CellJunichi Takahashi, Noriyuki Yamadaand Yasuyuki Shikamori, Agilent Technologies Inc.IntroductionEuropean Winter Conference on PlasmaSpectrochemistry - Zaragoza 2011Results and DiscussionProcedure is shown below.PV Si...
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2008|Agilent Technologies|Aplikace
Ultratrace Analysis of Solar(Photovoltaic) Grade Bulk Siliconby ICP-MSApplication NoteSemiconductorAuthorAbstractJunichi TakahashiA new quantitative method for the determination of ultratrace elemental impuritiesAgilent Technologiespresent in photovoltaic grade silicon is described using the Agilent 7500cs ICP-MS.Tokyo Analytical DivisionBoron (volatile element) and phosphorus (subject to...
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Applications of ICP-MSMeasuring Inorganic Impuritiesin Semiconductor ManufacturingApplication Compendium > Return to table of contents> Search entire documentTable of contentsICP-MS and ICP-QQQ in the Semiconductor Industry4Agilent Has Three Decades of ICP-MS Experience DrivingContinuous Innovation7Agilent ICP-MS Solutions for the Semiconductor Industry8Automating Analysis of...
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